Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

LT8331 Datasheet(PDF) 22 Page - Analog Devices

Part # LT8331
Description  60V 2MHz Low-IQ Boost, SEPIC and Flyback Controller
PDF  34 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT8331 Datasheet(HTML) 22 Page - Analog Devices

Back Button LT8331 Datasheet HTML 18Page - Analog Devices LT8331 Datasheet HTML 19Page - Analog Devices LT8331 Datasheet HTML 20Page - Analog Devices LT8331 Datasheet HTML 21Page - Analog Devices LT8331 Datasheet HTML 22Page - Analog Devices LT8331 Datasheet HTML 23Page - Analog Devices LT8331 Datasheet HTML 24Page - Analog Devices LT8331 Datasheet HTML 25Page - Analog Devices LT8331 Datasheet HTML 26Page - Analog Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 22 / 34 page
background image
LT8357
22
Rev. 0
For more information www.analog.com
The first term in this equation represents the conduction
losses in the device, and the second term represents the
switching loss. CRSS is the reverse transfer capacitance of
the MOSFET. f is the switching frequency. For maximum
efficiency, RDS(ON) and CRSS should be minimized.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
equation:
TJ =TA +PFET •θJA =TA +PFET •(θJC+θCA)
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that abso-
lute maximum ratings are not exceeded.
To achieve high switching frequency (such as 2MHz)
operation, QG and RDS(ON) of the power MOSFET must
be carefully selected. High performance power MOSFETs
with low QG and low RDS(ON) must be used. Since the gate
drive voltage is set by the 5V INTVCC supply, logic-level
threshold MOSFETs must be used in LT8357 applications.
When switching at high frequency like 2MHz, the substan-
tial gate charge current from INTVCC can be estimated as:
IINTVCC = f • QG
Make sure the total required INTVCC current not exceed-
ing the INTVCC current limit in the data sheet. Typically,
MOSFETs with less than 10nC QG are recommended.
Flyback Converter: Output Diode Selection
The output diode in a flyback converter is subject to large
RMS current and peak reverse voltage stresses. A fast
switching diode with a low forward drop and a low reverse
leakage is desired. Schottky diodes are recommended if
the output voltage is below 100V.
Approximate the required peak repetitive reverse voltage
rating VRRM using:
VRRM >
NS
NP
•VIN(MAX)+VOUT
The power dissipated by the diode is:
PD = IO(MAX) • VD
APPLICATIONS INFORMATION
and the diode junction temperature is:
TJ = TA +PD • RθJA
The RθJA to be used in this equation normally includes
the RθJC for the device plus the thermal resistance from
the board to the ambient temperature in the enclosure.
TJ must not exceed the diode maximum junction tem-
perature rating.
Flyback Converter: Output Capacitor Selection
The output capacitor of the flyback converter has a similar
operation condition as that of the boost converter. Refer to
the Boost Converter: Output Capacitor Selection section
for the calculation of COUT and ESRCOUT.
The RMS ripple current rating of the output capacitors
in discontinuous operation can be determined using the
following equation:
IRMS(COUT),DISCONTINOUS ≥IO(MAX)•
4−(3•D2)
3•D2
Flyback Converter: Input Capacitor Selection
The input capacitor in a flyback converter is subject to a large
RMS current due to the discontinuous primary current. To
prevent large voltage transients, use a low ESR input capaci-
tor sized for the maximum RMS current. The RMS ripple cur-
rent rating of the input capacitors in discontinuous operation
can be determined using the following equation:
IRMS(CIN),DISCONTINUOUS ≥
POUT(MAX)
VIN(MIN)•η
•
4−(3•DMAX)
3•DMAX
SEPIC CONVERTER APPLICATIONS
The LT8357 can be configured as a SEPIC (single-ended
primary inductance converter), as shown in Figure 10.
This topology allows for the input to be higher, equal, or
lower than the desired output voltage. The conversion
ratio as a function of duty cycle is:
VOUT +VD
VIN
=
D
1−D
in continuous conduction mode (CCM).



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com