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STM32WB10CC Datasheet(PDF) 60 Page - STMicroelectronics |
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STM32WB10CC Datasheet(HTML) 60 Page - STMicroelectronics |
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60 / 110 page ![]() Electrical characteristics STM32WB10CC 60/110 DS13259 Rev 2 6.3.4 Operating conditions at power-up / power-down The parameters given in Table 25 are derived from tests performed under the ambient temperature condition summarized in Table 20. 6.3.5 Embedded reset and power control block characteristics The parameters given in Table 26 are derived from tests performed under the ambient temperature conditions summarized in Table 20: General operating conditions. Table 25. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - - ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDRF VDDRF rise time rate - - ∞ VDDRF fall time rate - ∞ Table 26. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.70 V Falling edge 1.60 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.10 2.14 Falling edge 1.96 2.00 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.10 2.15 2.19 Falling edge 2.00 2.05 2.10 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 Falling edge 2.15 2.20 2.25 VPVD2 PVD threshold 2 Rising edge 2.41 2.46 2.51 Falling edge 2.31 2.36 2.41 |
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