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STM32WB10CC Datasheet(PDF) 76 Page - STMicroelectronics |
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STM32WB10CC Datasheet(HTML) 76 Page - STMicroelectronics |
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76 / 110 page  Electrical characteristics STM32WB10CC 76/110 DS13259 Rev 2 6.3.10 Internal clock source characteristics The parameters given in Table 49 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator VLSEH OSC32_IN input pin high level voltage - 0.7 VDDx -VDDx V VLSEL OSC32_IN input pin low level voltage -VSS - 0.3 VDDx tw(LSEH) tw(LSEL) OSC32_IN high or low time - 250 - - ns ftolLSE Frequency tolerance Includes initial accuracy, stability over temperature, aging and frequency pulling -500 - +500 ppm 1. Specified by design, not tested in production. Table 48. Low-speed external user clock characteristics, bypass mode(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 49. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 frequency VDD = 3.0 V, TA= 30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA = 0 to 85 °C -1 - 1 TA = –10 to 85 °C -2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 2.0 V to 3.6 V -0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Evaluated by characterization, not tested in production. 2. Specified by design, not tested in production. |
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