STM32WB10CC datasheet(82/110 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32WB10CC

82/110

DS13259 Rev 2

6.3.12

Flash memory characteristics

IDD(PLL)

PLL power consumption



on VDD(1)

VCO freq = 96 MHz

200

260

μA

VCO freq = 192 MHz

300

380

VCO freq = 344 MHz

520

650

1. Specified by design, not tested in production.

2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared

between the two PLLs.

Table 53. PLL characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 54. Flash memory characteristics(1)

1. Specified by design, not tested in production.

Symbol

Parameter

Conditions

Typ

Max

Unit

tprog

64-bit programming time

81.7

90.8

µs

tprog_row

One row (64 double word)

programming time

Normal programming

5.2

5.5

Fast programming

3.8

4.0

tprog_page

One page (2 Kbytes)



programming time

Normal programming

41.8

43.0

Fast programming

30.4

31.0

tERASE

Page (2 Kbytes) erase time

22.0

24.5

tME

Mass erase time

22.1

25.0

IDD

Average consumption from VDD

Write mode

3.4

Erase mode

3.4

Table 55. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Evaluated by characterization, not tested in production.

Unit

NEND

Endurance

TA = –10 to +85 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

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