STM32WB10CC datasheet(68/110 Pages) STMICROELECTRONICS

68 / 110 page

Electrical characteristics

STM32WB10CC

68/110

DS13259 Rev 2

Table 37. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C

IDD

(Shutdown)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

disabled

2.4 V

10.0

18.0

41.0

93.0

440

3.0 V

16.0

28.0

58.0

125

560

140

1495

3.6 V

34.0

54.0

99.0

190

745

143

1788

IDD

(Shutdown

with RTC)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

enabled

RTC clocked

by LSE



quartz (2) in

low drive

mode

2.4 V

405

425

455

515

875

3.0 V

525

550

585

660

1100

2310

2193

3.6 V

680

710

760

860

1450

2283

2704

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF

loading capacitors.

Table 38. Current consumption in VBAT mode

Symbol Parameter

Conditions

Typ

Max(1)

Unit

-VBAT 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C

IDD

(VBAT)

Backup

domain

supply

current

RTC disabled

2.4 V

1.00

2.00

5.00

13.0

62.0

3.0 V

1.00

3.00

8.00

19.0

88.0

3.6 V

2.00

6.00

15.0

33.0

145

RTC enabled

and clocked by

LSE quartz(2)

2.4 V

250

265

275

285

350

3.0 V

315

330

340

360

440

3.6 V

405

415

430

455

580

1. Evaluated by characterization, not tested in production, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF

loading capacitors.

Table 39. Current under Reset condition

Symbol

Conditions

Typ

Max(1)

Unit

0 °C

25 °C

40 °C

55 °C

85 °C

0 °C

25 °C

85 °C

IDD(RST)

2.4 V

330

335

345

350

385

µA

3.0 V

350

355

365

370

410

484

3.6 V

370

375

385

390

430

1. Evaluated by characterization, not tested in production, unless otherwise specified.

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