STM32WB55CC datasheet(87/193 Pages) STMICROELECTRONICS

87 / 193 page

DS11929 Rev 11

87/193

STM32WB55xx STM32WB35xx

Electrical characteristics

169

6.3

Operating conditions

6.3.1

Summary of main performance

6.3.2

General operating conditions

Table 23. Main performance at VDD = 3.3 V

Parameter

Test conditions

Typ

Unit

ICORE

Core current



consumption

VBAT (VBAT = 1.8 V, VDD = 0 V)

0.002

µA

Shutdown (VDD = 1.8 V)

0.013

Standby (VDD = 1.8 V, 32 Kbytes RAM retention)

0.320

Stop2

1.85

Sleep (16 MHz)

740

LP run (2 MHz)

320

Run (64 MHz)

5000

Radio RX(1)

4500

Radio TX 0 dBm output power(1)

5200

IPERI

Peripheral

current

consumption

BLE

Advertising with Stop 2(2)

(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)

Advertising with Stop 2(2)

(Tx = 0 dBm, 6 bytes; period 10.24 s, 3 channels)

LP timers

I2C3

7.1

LPUART

7.7

RTC

2.5

1. Power consumption including RF subsystem and digital processing.

2. Power consumption integrated over 100 s, including Cortex-M4, RF subsystem, digital processing and Cortex-M0+.

Table 24. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK1 Internal APB1 clock frequency

fPCLK2 Internal APB2 clock frequency

VDD

Standard operating voltage

1.71(1)(2)

3.6

VDDA

Analog supply voltage

ADC or COMP used

1.62

3.6

VREFBUF used

2.4

ADC, COMP, VREFBUF



not used

VBAT

Backup operating voltage

1.55

3.6

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