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MIC38C43 Datasheet(PDF) 9 Page - Microchip Technology |
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MIC38C43 Datasheet(HTML) 9 Page - Microchip Technology |
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9 / 24 page ![]() 2020 - 2022 Microchip Technology Inc. and its subsidiaries DS20006436B-page 9 MIC38C42/43/44/45 4.0 FUNCTIONAL DESCRIPTION Familiarity with 384x converter designs is assumed. 4.1 MIC38C4x Advantages 4.1.1 START-UP CURRENT Start-up current has been reduced to an ultra-low 50 μA (typical) permitting higher-resistance, lower-wattage, start-up resistors (powers controller during power supply start-up). The reduced resistor wattage reduces cost and printed circuit space. 4.1.2 OPERATING CURRENT Quiescent operating current has been reduced to 4 mA compared to 11 mA for a typical bipolar controller. The controller runs cooler and the VDD hold-up capacitance required during start-up may be reduced. 4.1.3 OUTPUT DRIVER Complementary internal P-channel and N-channel MOSFETs produce rail-to-rail output voltages for better performance driving external power MOSFETs. The driver transistor’s low on resistance and high peak current capability can drive gate capacitances of greater than 1000 pF. The value of output capacitance which can be driven is determined only by the rise/fall time requirements. Within the restrictions of output capacity and controller power dissipation, maximum switching frequency can approach 500 kHz. 4.2 Design Precautions When operating near 20V, circuit transients can easily exceed the 20V absolute maximum rating, permanently damaging the controller’s CMOS construction. To reduce transients, connect a 0.1 μF low-ESR capacitor to next to the controller’s supply VDD (or VD for ‘-1’ versions) and ground connections. Film type capacitors, such as Wima MKS2, are recommended. When designing high-frequency converters, avoid capacitive and inductive coupling of the switching waveform into high impedance circuitry such as the error amplifier, oscillator, and current sense amplifier. Avoid long printed-circuit traces and component leads. Locate oscillator and compensation circuitry near the IC. Use high frequency decoupling capacitors on VREF, and if necessary, on VDD. Return high di/dt currents directly to their source and use large area ground planes. 4.3 Buck Converter Refer to Figure 4-1. When at least 26V is applied to the input, C5 is charged through R2 until the voltage VDD is greater than 14.5V (the undervoltage lockout value of the MIC38C42). Output switching begins when Q1 is turned on by the gate drive transformer T1, charging the output filter capacitor C3 through L1. D5 supplies a regulated +12V to VDD once the circuit is running. Current sense transformer CT1 provides current feedback to ISNS for current-mode operation and cycle-by-cycle current limiting. This is more efficient than a high-power sense resistor and provides the required ground-referenced level shift. When Q1 turns off, current flow continues from ground through D1 and L1 until Q1 is turned on again. The 100V Schottky diode D1 reduces the forward voltage drop in the main current path, resulting in higher efficiency than could be accomplished using an ultra-fast-recovery diode. R1 and C2 suppress parasitic oscillations from D1. Using a high-value inductance for L1 and a low-ESR capacitor for C3 permits small capacitance with minimum output ripple. This inductance value also improves circuit efficiency by reducing the flux swing in L1. Magnetic components are carefully chosen for minimal loss at 500 kHz. CT1 and T1 are wound on Magnetics, Inc. P-type material toroids. L1 is wound on a Siemens N49 EFD core. TABLE 4-1: MAGNETIC COMPONENTS Symbol Custom Coils (Note 1) ETS (Note 2) CT1 4923 ETS 92420 T1 4924 ETS 92419 L1 4925 ETS 92421 Note 1: Custom Coils, Alcester, SD. Tel: (605) 934-2460. 2: Energy Transformation Systems, Inc. Tel: (510) 656-2012. TABLE 4-2: COMPONENT TEST RESULTS Test Conditions Results Line Regulation VIN = 26V to 80V, VOUT = 12V, IO = 2A 0.5% Load Regulation VIN = 48V, VOUT = 12V, IO = 0.2A to 2A 0.6% Efficiency VIN = 48V, VOUT = 12V, IO = 2A 90% Output Ripple VIN = 48V, VOUT = 12V, IO = 2A (20 MHz BW) 100 mV |
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