STB41N40DM6AG datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On-/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS= 0 V, ID = 1 mA

400

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 400 V

µA

VGS = 0 V, VDS = 400 V,

TC = 125 °C(1)

100

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±25 V

±1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 20.5 A

0.050

0.065

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2310

Coss

Output capacitance

151

Crss

Reverse transfer capacitance

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 320 V, VGS = 0 V

450

Intrinsic gate resistance

f = 1 MHz open drain

1.3

Ω

Total gate charge

VDD = 320 V, ID = 41 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 200 V, ID = 20.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

Rise time

10.3

td(off)

Turn-off delay time

Fall time

9.4

STB41N40DM6AG

Electrical characteristics

DS12571 - Rev 1

page 3/14

STB41N40DM6AG Datasheet(PDF) 3 Page - STMicroelectronics

STB41N40DM6AG Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL