STB41N40DM6AG datasheet(4/14 Pages) STMICROELECTRONICS

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

150

VSD(2)

Forward on voltage

ISD = 41 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 41 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

103

Qrr

Reverse recovery charge

0.44

µC

IRRM

Reverse recovery current

8.5

trr

Reverse recovery time

ISD = 41 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

180

Qrr

Reverse recovery charge

1.5

µC

IRRM

Reverse recovery current

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±1 mA, ID = 0 A

±30

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

STB41N40DM6AG

Electrical characteristics

DS12571 - Rev 1

page 4/14

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