PPC5605BAMLL4R datasheet(48/114 Pages) NXP

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MPC5607B Microcontroller Data Sheet, Rev. 10

Electrical characteristics

NXP Semiconductors

Table 23 provides the weight of concurrent switching I/Os.

Table 22. I/O consumption

Symbol

Parameter

Conditions1

1 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to125 °C, unless otherwise specified

Value

Unit

Min Typ Max

ISWTSLW

2 Stated maximum values represent peak consumption that lasts only a few ns during I/O transition.

CC D Dynamic I/O current for

SLOW configuration

CL = 25 pF

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

ISWTMED

2 CC D Dynamic I/O current for

MEDIUM configuration

CL = 25 pF

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

ISWTFST

CC D Dynamic I/O current for

FAST configuration

CL = 25 pF

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

110 mA

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

IRMSSLW CC D Root mean square I/O

current for SLOW

configuration

CL = 25 pF, 2 MHz

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

2.3

CL = 25 pF, 4 MHz

—

3.2

CL = 100 pF, 2 MHz

—

6.6

CL = 25 pF, 2 MHz

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

1.6

CL = 25 pF, 4 MHz

—

2.3

CL = 100 pF, 2 MHz

—

4.7

IRMSMED CC D Root mean square I/O

current for MEDIUM

configuration

CL = 25 pF, 13 MHz

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

6.6

CL = 25 pF, 40 MHz

—

13.4

CL = 100 pF, 13 MHz

—

18.3

CL = 25 pF, 13 MHz

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

CL = 25 pF, 40 MHz

—

8.5

CL = 100 pF, 13 MHz

—

IRMSFST CC D Root mean square I/O

current for FAST

configuration

CL = 25 pF, 40 MHz

VDD = 5.0 V ± 10%,

PAD3V5V = 0

——

CL = 25 pF, 64 MHz

—

CL = 100 pF, 40 MHz

—

CL = 25 pF, 40 MHz

VDD = 3.3 V ± 10%,

PAD3V5V = 1

——

CL = 25 pF, 64 MHz

—

CL = 100 pF, 40 MHz

—

IAVGSEG SR D Sum of all the static I/O

current within a supply

segment

VDD = 5.0 V ± 10%, PAD3V5V = 0

—

VDD = 3.3 V ± 10%, PAD3V5V = 1

—

PPC5605BAMLL4R Datasheet(PDF) 48 Page - NXP Semiconductors

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