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4622 Datasheet(PDF) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4622
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4622 Datasheet(HTML) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

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N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.4
494
593
692
830
193
18
0
2
4
6
8
10
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=10V
ID=6.4A
0
10
20
30
40
50
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µs
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
10s
10ms
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4622
Page
v1.0
4
www.sztuofeng.com



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