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4622 Datasheet(PDF) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4622
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4622 Datasheet(HTML) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4622 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 7Page - Shenzhen Tuofeng Semiconductor Technology Co 4622 Datasheet HTML 8Page - Shenzhen Tuofeng Semiconductor Technology Co  
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
5
10
15
20
25
0
1
2
3
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-2.5V
-6V
-3.5V
-4.5V
-10V
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
-VGS(Volts)
Figure 2: Transfer Characteristics
30
40
50
60
70
80
0
5
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
VGS=-4.5V
VGS=-2.5V
20
40
60
80
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
VDS=-5V
VGS=-2.5V
VGS=-4.5V
ID=-4.5A
25°C
125°C
ID=-4.5A
-40°C
ID=-6.4A
-40°C
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4622
Page
v1.0
6
www.sztuofeng.com



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