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4622 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4622 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 8 page  Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W RθJL n-ch 35 40 °C/W p-ch 48 62.5 °C/W p-ch 74 110 °C/W RθJL p-ch 35 40 °C/W Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State -25 Power Dissipation TA=25°C PD Steady-State Junction and Storage Temperature Range A Continuous Drain Current AF TA=25°C ID Pulsed Drain Current B W 6.4 35 2 -6.4 2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel 20 -20 ±12 Drain-Source Voltage ±16 Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150 -55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A 13 25 Avalanche Current B Repetitive avalanche energy 0.3mH B 13 25 N and P-Channel Enhancement Mode Power MOSFET Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =6.4A RDS(ON) < 23mΩ @ VGS ● P-Channel VDS = -20V,ID = -6.4A RDS(ON) < 40mΩ @ VGS ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622 RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=-2.5V Equivalent Cir cuit MARKING 4622 o TFCYWP Y :year code W :week code SOP-8 =4.5V =-4.5V Page v1.0 1 www.sztuofeng.com |
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