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VS-VSKT26.. Datasheet(PDF) 3 Page - Vishay Siliconix

Part # VS-VSKT26..
Description  AAP Gen 7 (TO-240AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A
PDF  10 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-VSKT26.. Datasheet(HTML) 3 Page - Vishay Siliconix

  VS-VSKT26.. Datasheet HTML 1Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 2Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 3Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 4Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 5Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 6Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 7Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 8Page - Vishay Siliconix VS-VSKT26.. Datasheet HTML 9Page - Vishay Siliconix Next Button
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VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Jul-2018
3
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative gate voltage
-VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = -40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = -40 °C
Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
Maximum RMS insulation voltage
VINS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
-40 to +125
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.76
°C/W
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
Nm
busbar
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.26..
0.212
0.258
0.330
0.466
0.72
0.166
0.276
0.357
0.482
0.726
°C/W



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