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STGYA50M120DF3 Datasheet(PDF) 8 Page - STMicroelectronics

Part # STGYA50M120DF3
Description  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 Datasheet(HTML) 8 Page - STMicroelectronics

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Figure 19. Switching times vs collector current
GADG270720211210STC
10 2
10 1
10 0
0
20
40
60
80
100
t
(ns)
IC (A)
tr
tf
td(off)
td(on)
VGE = 15 V, TJ = 175
℃
6
10
Figure 20. Switching times vs gate resistance
GADG270720211210STR
10 2
10 1
0
5
10
15
20
t
(ns)
RG (Ω)
tr
tf
td(off)
td(on)
VGE = 15 V, TJ = 175
℃
6
IC = 50 A,
Figure 21. Reverse recovery current vs diode current
slope
GADG270720211219RRC
40
35
30
25
20
15
10
0
500
1000
1500
2000
Irrm
(A)
di/dt (A/µs)
VGE = 15 V, TJ = 175
℃
6
IF = 50 A,
Figure 22. Reverse recovery time vs diode current slope
GADG270720211219RRT
1000
900
800
700
600
0
500
1000
1500
2000
trr
(ns)
di/dt (A/µs)
VGE = 15 V, TJ = 175
℃
6
IF = 50 A,
Figure 23. Reverse recovery charge vs diode current
slope
GADG270720211220RRQ
7
6
5
4
3
0
500
1000
1500
2000
Qrr
(µC)
di/dt (A/µs)
VGE = 15 V, TJ = 175
℃
6
IF = 50 A,
Figure 24. Reverse recovery energy vs diode current
slope
GADG270720211221RRE
3
2
1
0
0
500
1000
1500
2000
Err
(mJ)
di/dt (A/µs)
VGE = 15 V, TJ = 175
℃
6
IF = 50 A,
STGYA50M120DF3
Electrical characteristics (curves)
DS13799 - Rev 2
page 8/15



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