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STGYA50M120DF3 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGYA50M120DF3
Description  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 Datasheet(HTML) 1 Page - STMicroelectronics

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background image
Max247 long leads
TAB
1
2
3
1
2
3
TAB
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
•
Maximum junction temperature: TJ = 175 °C
•
10 μs of short-circuit withstand time
•
Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
•
Tight parameter distribution
•
Positive VCE(sat) temperature coefficient
•
Low thermal resistance
•
Soft- and fast-recovery antiparallel diode
Applications
•
Industrial drives
•
UPS
•
Solar inverters
•
General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product status link
STGYA50M120DF3
Product summary
Order code
STGYA50M120DF3
Marking
G50M120DF3
Package
Max247 long leads
Packing
Tube
Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
in a Max247 long leads package
STGYA50M120DF3
Datasheet
DS13799 - Rev 2 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com


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