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STGYA50M120DF3 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGYA50M120DF3
Description  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 50 A,
VGE = 15 V, RG = 10 Ω
(see Figure 28. Test circuit for inductive
load switching)
38
-
ns
tr
Current rise time
16
-
ns
(di/dt)on
Turn-on current slope
2580
-
A/µs
td(off)
Turn-off delay time
258
-
ns
tf
Current fall time
142
-
ns
Eon(1)
Turn-on switching energy
2
-
mJ
Eoff(2)
Turn-off switching energy
3.2
-
mJ
Ets
Total switching energy
5.2
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 50 A,
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
(see Figure 28. Test circuit for inductive
load switching)
36
-
ns
tr
Current rise time
18
-
ns
(di/dt)on
Turn-on current slope
2400
-
A/µs
td(off)
Turn-off delay time
296
-
ns
tf
Current fall time
311
-
ns
Eon(1)
Turn-on switching energy
3.2
-
mJ
Eoff(2)
Turn-off switching energy
5.4
-
mJ
Ets
Total switching energy
8.6
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C
10
-
µs
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 50 A, VR = 600 V,
VGE = 15 V, di/dt = 1700 A/µs
(see Figure 28. Test circuit for inductive
load switching)
-
325
-
ns
Qrr
Reverse recovery charge
-
2.2
-
µC
Irrm
Reverse recovery current
-
20
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
60
-
A/µs
Err
Reverse recovery energy
-
1.1
-
mJ
trr
Reverse recovery time
IF = 50 A, VR = 600 V,
VGE = 15 V, di/dt = 1700 A/µs, TJ = 175 °C
(see Figure 28. Test circuit for inductive
load switching)
-
750
-
ns
Qrr
Reverse recovery charge
-
7.65
-
µC
Irrm
Reverse recovery current
-
41
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
65
-
A/µs
Err
Reverse recovery energy
-
3.47
-
mJ
STGYA50M120DF3
Electrical characteristics
DS13799 - Rev 2
page 4/15



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