A2C35S12M3 datasheet(4/18 Pages) STMICROELECTRONICS

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Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, diF/dt = 1424 A/μs,

TJ = 150 °C

380

Qrr

Reverse recovery charge

6.8

µC

Irrm

Reverse recovery current

Erec

Reverse recovery energy

3.2

RTHj-c

Thermal resistance

junction-to-case

Each diode

0.80

0.90

°C/W

RTHc-h

Thermal resistance case-

to-heatsink

Each diode, λgrease = 1 W/(m·°C)

0.75

°C/W

1.2

Brake stage

Limiting values at TJ = 25 °C, unless otherwise specified.

1.2.1

IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

Continuous collector current (TC = 100 °C)

ICP (1)

Pulsed collector current (tp = 1 ms)

VGE

Gate-emitter voltage

±20

PTOT

Total power dissipation of each IGBT

(TC = 25 °C, TJ = 175 °C)

250

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under

switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 6. Electrical characteristics of the IGBT, brake stage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

IC = 1 mA, VGE = 0 V

1200

VCE(sat)

(terminal)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 35 A

1.95

VGE = 15 V, IC = 35 A,

TJ = 150 ˚C

2.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

100

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

± 500

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

2154

Coes

Output capacitance

164

Cres

Reverse transfer capacitance

A2C35S12M3

Brake stage

DS11506 - Rev 6

page 4/18

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