FDMS3604S datasheet(2/16 Pages) ONSEMI

2 / 16 page

FDMS3604S

www.onsemi.com

MOSFET MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted

Symbol

Parameter

Units

VDS

Drain to Source Voltage

VDSt

Drain to Source Transient Voltage ( tTransient < 100 ns)

VGS

Gate to Source Voltage (Note 3)

±20

Drain Current

−Continuous (Package limited)

TC = 25 °C

−Continuous (Silicon limited)

TC = 25 °C

130

−Continuous

TA = 25 °C

13 (Note 1a)

23 (Note 1b)

−Pulsed

100

EAS

Single Pulse Avalanche Energy

40 (Note 4)

60 (Note 5)

Power Dissipation for Single Operation TA = 25 °C

2.2 (Note 1a)

2.5 (Note 1b)

Power Dissipation for Single Operation TA = 25 °C

1.0 (Note 1c)

1.0 (Note 1d)

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Parameter

Unit

RθJA

Thermal Resistance, Junction to Ambient

57 (Note 1a)

50 (Note 1b)

°C/W

RθJA

Thermal Resistance, Junction to Ambient

125 (Note 1c)

120 (Note 1d)

RθJC

Thermal Resistance, Junction to Case

3.5

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

22CA N7CC

FDMS3604S

Power 56

13”

12 mm

3000 Units

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