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FDMS3604S Datasheet(PDF) 3 Page - ON Semiconductor

Part # FDMS3604S
Description  MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual
PDF  16 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3604S Datasheet(HTML) 3 Page - ON Semiconductor

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FDMS3604S
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted
Symbol
Parameter
Column Head
Test Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown
Voltage
ID = 250 mA, VGS = 0 V ID = 1 mA,
VGS = 0 V
Q1
Q2
30
30
V
DBVDSS /
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
15
12
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Q1
Q2
1
500
mA
IGSS
Gate to Source Leakage Current,
Forwad
VGS = 20 V, VDS= 0 V
Q1
Q2
100
100
nA
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA VGS = VDS,
ID = 1 mA
Q1
Q2
1.1
1.1
2
1.8
2.7
3
V
DVGS(th) /
DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
−6
−5
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = 10 V, ID = 13 A VGS = 4.5 V,
ID = 11 A
VGS = 10 V, ID = 13 A , TJ = 125°C
Q1
5.8
8.5
7.8
8
11
10.8
mW
VGS = 10 V, ID = 23 A VGS = 4.5 V,
ID = 21 A
VGS = 10 V, ID = 23 A , TJ = 125°C
Q2
2.0
3.0
2.6
2.6
3.5
4
gFS
Forward Transconductance
VDS = 5 V, ID = 13 A VDS = 5 V, ID = 23 A
Q1
Q2
61
130
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Q1:
VDS = 15 V, VGS = 0 V, f = 1 MHz
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHz
Q1
Q2
1340
3240
1785
4310
pF
Coss
Output Capacitance
Q1
Q2
485
1230
645
1635
pF
Crss
Reverse Transfer Capacitance
Q1
Q2
53
103
80
155
pF
Rg
Gate Resistance
Q1
Q2
0.2
0.2
0.6
0.8
2
3
W
SWITCHING CHARACTERISTICS
td(on)
Turn−On Delay Time
Q1:
VDD = 15 V, ID = 13 A, RGEN = 6 W
Q2:
VDD = 15 V, ID = 23 A, RGEN = 6 W
Q1
Q2
8.2
13
16
23
ns
tr
Rise Time
Q1
Q2
2.5
4.8
10
10
ns
td(off)
Turn−Off Delay Time
Q1
Q2
20
31
32
50
ns
tf
Fall Time
Q1
Q2
2.2
3.4
10
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
Q1
VDD = 15 V, ID = 13 A
Q2
VDD = 15 V, ID = 23 A
Q1
Q2
21
47
29
66
nC
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Q1
Q2
10
22
14
31
nC
Qgs
Gate to Source Gate Charge
Q1
Q2
3.9
9
nC
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
3.1
5.5
nC



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