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STB16N90K5 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STB16N90K5
Description  N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB16N90K5 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical gate charge characteristics
GADG300720191127QVG
700
600
500
400
300
200
100
0
14
12
10
8
6
4
2
0
0
6
12
18
24
30
36
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 720 V, ID = 15 A
Qgs
Qgd
Qg
Figure 8. Typical capacitances vs voltage
GIPG231020180825CVR
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 9. Normalized threshold voltage vs temperature
GIPG221020181223VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID=250 μA
Figure 10. Normalized on-resistance vs temperature
GIPG221020181224RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
VGS = 10 V
TJ (°C)
Figure 11. Maximum avalanche energy vs temperature
GIPG231020180827EAS
360
300
240
180
120
60
0
-75
-25
25
75
125
EAS
(mJ)
TJ (°C)
ID = 5 A
VDD = 50 V
Single pulse
Figure 12. Typical source-drain diode characteristics
GIPG231020180825SDF
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2
4
6
8
10
12
14
VSD
(V)
ISD (A)
TJ = -50 °C
TJ = 25 °C
TJ = 150 °C
STB16N90K5
Electrical characteristics (curves)
DS12802 - Rev 2
page 6/20



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