1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

15

A

ID

Drain current (continuous) at TC = 100 °C

9

A

ID (1)

Drain current (pulsed)

60

A

PTOT

Total power dissipation at TC = 25 °C

190

W

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 15 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V.

3. VDS ≤ 720 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.66

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

30

°C/W

1. When mounted on a 1-inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

5

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

380

mJ

STB16N90K5

Electrical ratings

DS12802 - Rev 2

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