Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

15

A

ISDM (1)

Source-drain current (pulsed)

-

60

A

VSD (2)

Forward on voltage

ISD = 15 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

-

458

ns

Qrr

Reverse recovery charge

-

8.13

µC

IRRM

Reverse recovery current

-

35.5

A

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V,

TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

-

546

ns

Qrr

Reverse recovery charge

-

9.2

µC

IRRM

Reverse recovery current

-

33.7

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±1 mA, ID = 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for

additional external componentry.

STB16N90K5

Electrical characteristics

DS12802 - Rev 2

page 4/20