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FS75R12KE3G Datasheet(PDF) 2 Page - eupec GmbH

Part # FS75R12KE3G
Description  IGBT-Modules
PDF  8 Pages
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Manufacturer  EUPEC [eupec GmbH]
Direct Link  http://www.eupec.com
Logo EUPEC - eupec GmbH

FS75R12KE3G Datasheet(HTML) 2 Page - eupec GmbH

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vorläufige Daten
preliminary data
Technische Information / technical information
FS75R12KE3 G
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
260
-
ns
-
285
-
ns
-
30
-
ns
-
45
-
ns
-
420
-
ns
-
520
-
ns
-
65
-
ns
-
90
-
ns
-
1,65
2,1
V
-
1,65
t.b.d.
V
-
90
-
A
-
100
-
A
-
7
-
µC
-
14
-
µC
-
3
-
mJ
-
6
-
mJ
IF=IC,nom, -diF/dt= 2000A/µs
Qr
Ausschaltenergie pro Puls
reverse recovery energy
Erec
VR= 600V, VGE= -10V, Tvj= 125°C
IF=IC,nom, -diF/dt= 2000A/µs
IC= IC, nom, VCC= 600V
VR= 600V, VGE= -10V, Tvj= 25°C
Sperrverzögerungsladung
recoverred charge
Eon
IC= IC, nom, VCC= 600V, Lσ= 70nH
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
Fallzeit (induktive Last)
fall time (inductive load)
SC data
Einschaltverlustenergie pro Puls
Kurzschlussverhalten
tP ≤ 10µsec, VGE ≤ 15V, Tvj ≤ 125°C
ISC
-
300
-
A
turn on energy loss per pulse
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
IC= IC, nom, VCC= 600V
21
-
nH
stray inductance module
LσCE
Diode Wechselrichter / diode inverter
VR= 600V, VGE= -10V, Tvj= 125°C
VF
forward voltage
Modulinduktivität
Tc= 25°C
VCC= 900V, VCEmax= VCES - LσCE ·di/dt
1,8
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
RCC´/EE´
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
Eoff
IC= IC, nom, VCC= 600V, Lσ= 70nH
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
m
Ω
-
7
-
mJ
-
mJ
-
9,5
-
td,off
VGE= ±15V, RG= 4,7
Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
IC= IC, nom, VCC= 600V
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7
Ω, Tvj= 125°C
tf
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7Ω, Tvj= 125°C
Charakteristische Werte / characteristic values
IF=IC,nom, -diF/dt= 2000A/µs
Durchlassspannung
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
Charakteristische Werte / characteristic values
-
-
Rückstromspitze
peak reverse recovery current
IRM
IF= IC, nom, VGE= 0V, Tvj= 25°C
IF= IC, nom, VGE= 0V, Tvj= 125°C
VR= 600V, VGE= -10V, Tvj= 25°C
VR= 600V, VGE= -10V, Tvj= 125°C
Transistor Wechselrichter / transistor inverter
td,on
Anstiegszeit (induktive Last)
rise time (inductive load)
IC= IC, nom, VCC= 600V
tr
VGE= ±15V, RG= 4,7Ω, Tvj= 25°C
VGE= ±15V, RG= 4,7
Ω, Tvj= 125°C
VR= 600V, VGE= -10V, Tvj= 25°C
2 (8)
Datenblatt_FS75R12KE3G_V2.xls
2001-08-16



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