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HC805K3GRS/D Datasheet(PDF) 32 Page - NXP Semiconductors |
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HC805K3GRS/D Datasheet(HTML) 32 Page - NXP Semiconductors |
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32 / 119 page ![]() General Release Specification Random-Access Memory (RAM) MC68HC805K3 — Rev. 1.0 32 Memory Map 2.4 Random-Access Memory (RAM) The total RAM consists of 64 bytes (including the stack) at locations $00C0 through $00FF. The stack pointer can access 32 locations from $00E0 to $00FF. The stack begins at address $00FF and proceeds down to $00E0. Using the stack area for data storage or temporary work locations requires care to prevent it from being overwritten due to stacking from an interrupt or subroutine call. 2.5 User Electronically Erasable Programmable Read-Only Memory A total of 928 bytes of user EEPROM is on chip. This includes 160 bytes in page zero from locations $0020 through $00BF, 760 bytes of user EEPROM with locations $0100 through $03F7 for user program storage, and 8 bytes for user vectors at locations $03F8 through $03FF. 2.6 Mask Option Registers (MOR) $0012 and $0013 The mask option registers consist of 10 EEPROM bits located at $0012 and $0013. These registers hold the option bits for the interrupt sensitivity, COP enable/disable, enable pulldowns/interrupt on port A and port B, interrupts via the lower four bits of port A, STOP instruction as HALT, oscillator type, and security. When in the erased state, the EEPROM cells will read as logic zeros. These registers are refreshed at a rate of 1 ms (typical) using an internal ring oscillator. During STOP and MOR programming, the MOR1 and MOR2 will not be refreshed. $0012 Bit 7 654321 Bit 0 Read: RCSTD PIN3 RC HALT SWPDI PIRQ LEVIRQ COPEN Write: $0013 Bit 7 654321 Bit 0 Read: SBIT1 SBIT0 Write: = Unimplemented Figure 2-5. Mask Option Register Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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