PAC1941T-1ESLASH4MX. datasheet(7/96 Pages) MICROCHIP

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DS20006543A-page 7

PAC194X

VSENSE Offset

Accuracy, Referenced

to Input

VSENSE_OFFSET_ERR

—

±25

±100

µV

16-bit resolution

VBUS Gain Accuracy

VBUS_GAIN_ERR

—

±0.02

±0.2

±0.25

At +25°C

typical, -40°C to +125°C

Power Accumulator Accuracy (1 Sigma Error Range with > 1000 Accumulations)

Accumulator Error

ACC_Err

—

0.1

—

VSENSE = 97 mV

—0.1

—

VSENSE = 10 mV

—1

—

VSENSE = 1 mV

—2

—

VSENSE = 100 µV

—4

—

VSENSE = 50 µV

Active Mode Timing

Time to First

Communications

tINT_T

—

Time after VDD is applied before it

is ready to begin communication

and measurement.

Transition from Sleep

State to Start of

Conversion Cycle

tSLEEP_TO_ACTIVE

—

Time from Sleep state exit

commanded by register write to

the beginning of the conversion

cycle.

Digital I/O Pins (SLOW/ALERT, SM_CLK, SM_DATA Pins)

Input High Voltage

VIH

1.35

—

Input Low Voltage

VIL

——

0.8

Output Low Voltage

VOL

—

0.4

Sinking 8 mA for the ALERT pins

and 20 mA for the CLK pin in all

modes. 4 mA for the SDA pin in

3.4 MHz mode.

Leakage Current

ILEAK

-0.5

—

+0.5

µA

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Digital I/O Pin (PWRDN)

Input High Voltage

VIH

1.3

—

Input Low Voltage

VIL

——

0.6

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, TA = -40°C to +125°C,

VDD = 2.7V to 5.5V, VBUS = 0V to 9V; VSENSE = (SENSE+ – SENSE-) = 0V;

Typical values are at TA = +25°C, VDD = 3.3V

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

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