Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

STM32U545NET3QTR Datasheet(PDF) 202 Page - STMicroelectronics

Part # STM32U545NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR Datasheet(HTML) 202 Page - STMicroelectronics

Back Button STM32U545NET3QTR Datasheet HTML 198Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 199Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 200Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 201Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 202Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 203Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 204Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 205Page - STMicroelectronics STM32U545NET3QTR Datasheet HTML 206Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 202 / 283 page
background image
Electrical characteristics
STM32U545xx
202/283
DS14216 Rev 1
5.3.10
Flash memory characteristics
Table 87. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max(2)
Unit
tprog
128-bit programming time
Normal mode
118
118
µs
Burst mode
48
48
tprog_page One 8-Kbyte page programming time
fAHB = 160 MHz, normal mode
60.2
-
ms
fAHB = 160 MHz, burst mode
24.5
-
tprog_bank One 1-Mbyte bank programming time
fAHB = 160 MHz, normal mode
7710
-
fAHB = 160 MHz, burst mode
3140
-
tERASE One 8-Kbyte page erase time
10 k endurance cycles
1.5
2.4
100 k endurance cycles
1.7
3.4
tME
Mass erase time (one bank)
10 k endurance cycles
49
77
Mass erase time (two banks)
98
154
IDD(3)
Average consumption from VDD
Write mode
2.1
-
mA
Erase mode
1.3
-
Maximum current (peak)
Write mode
2.6
-
Erase mode
3.0
-
1. Specified by design. Not tested in production.
2. Evaluated by characterization after cycling. Not tested in production.
3. Evaluated by characterization. Not tested in production.
Table 88. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND Endurance
Whole bank
TA = –40 to 125 °C
100
kcycles
tRET
Data retention
TA = 85 °C after 1 kcycle(2)
30
Years
TA = 105 °C after 1 kcycle(2)
15
TA = 125 °C after 1 kcycle(2)
10
TA = 55 °C after 10 kcycles(2)
30
TA = 85 °C after 10 kcycles(2)
15
TA = 105 °C after 10 kcycles(2)
10
TA = 55 °C after 100 kcycles(2)
30
TA = 85 °C after 100 kcycles(2)
15
TA = 105 °C after 100 kcycles(2)
10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com