STM32U545NET3QTR datasheet(203/283 Pages) STMICROELECTRONICS

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DS14216 Rev 1

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STM32U545xx

Electrical characteristics

258

5.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through the

I/O ports), the device is stressed by two electromagnetic events until a failure occurs. The

failure is indicated by the LEDs as follows:

•

Electrostatic discharge (ESD) (positive and negative): applied to all device pins until a

functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB (fast transient voltage burst) (positive and negative): applied to VDD and VSS pins

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in the table below. They are based on the EMS levels and classes

defined in application note EMC design guide for STM8, STM32 and Legacy MCUs

(AN1709).

Designing hardened software to avoid noise problems

The EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. Note that good EMC performance is

highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for the application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•

Corrupted program counter

•

Unexpected reset

•

Critical data corruption (control registers)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the oscillator pins for

1 second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

Table 89. EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, fHCLK = 160 MHz,

LQFP100 conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS pins

to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, fHCLK = 160 MHz,

LQFP100 conforming to IEC 61000-4-4

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