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STM32U545NET3QTR Datasheet(PDF) 228 Page - STMicroelectronics |
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STM32U545NET3QTR Datasheet(HTML) 228 Page - STMicroelectronics |
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228 / 283 page  Electrical characteristics STM32U545xx 228/283 DS14216 Rev 1 5.3.20 Temperature sensor characteristics 5.3.21 VCORE monitoring characteristics 5.3.22 VBAT monitoring characteristics Table 109. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - - 1.3 °C Avg_Slope(1) Average slope 2 2.5 3.0 mV/°C V30(2) Voltage at 30°C (±1 °C) 700 752 800 mV ∆(Vcontinuous - Vsampling)(3) Difference of voltage between continuous and sampling modes(4) - - –10/+4 tSTART (TS_BUF) (3) Sensor buffer startup time - 1 10 µs tS_temp(3) ADC sampling time when reading the temperature 13 - - IDD(TS)(3) Temperature sensor consumption from VDD, when selected by ADC -14 20 µA 1. Evaluated by characterization. Not tested in production. 2. Measured at VREF+ = VDDA = 3.0 V ±10 mV. The V30 A/D conversion result is stored in the TS_CAL1 byte. Refer to Table 16: Temperature sensor calibration values. 3. Specified by design. Not tested in production. 4. The temperature sensor is in continuous mode when the regulator is in range 1, 2 or 3. The temperature sensor is in sampling mode when the regulator is in range 4, or when the device is in Stop 1 or Stop 2 mode. Table 110. VCORE monitoring characteristics(1) Symbol Parameter Min Typ Max Unit tS_VCORE ADC sampling time when reading the VCORE voltage 1- - µs 1. Specified by design. Not tested in production. Table 111. VBAT monitoring characteristics(1) Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT - 4 × 25.6 - kΩ Q Ratio on VBAT measurement - 4 - - Er(2) Error on Q -5 - 5 % tS_VBAT(2) ADC sampling time when reading the VBAT 5 - - µs 1. 1.58 V ≤ VBAT ≤ 3.6 V 2. Specified by design. Not tested in production. |
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