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STM32U545NET3QTR Datasheet(PDF) 245 Page - STMicroelectronics

Part # STM32U545NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR Datasheet(HTML) 245 Page - STMicroelectronics

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DS14216 Rev 1
245/283
STM32U545xx
Electrical characteristics
258
5.3.30
PSSI characteristics
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature, fHCLK frequency and VDD supply voltage
summarized in Table 33, with the following configuration:
Output speed set to OSPEEDRy[1:0] = 10
PSSI_PDCK polarity: falling
PSSI_RDY and PSSI_DE polarity: low
Bus width: 16 lines
Data width: 32 bits
Capacitive load CL = 30 pF
Measurement points done at 0.5 × VDD level
I/O compensation cell activated
HSLV activated when VDD ≤ 2.7 V
Voltage scaling range 1
Table 121. PSSI transmit characteristics(1)
Symbol
Parameter
Conditions
Min
Max
Unit
-
Frequency ratio DCMI_PDCK/fHCLK
--
0.4
-
PSSI_PDCK PSSI clock input
2.7 V ≤ VDD ≤ 3.6 V
-
64(2)
MHz
1.71 V ≤ VDD ≤ 3.6 V
-
47(2)
DPIXEL
PSSI clock input duty cycle
-
30
70
%
tOV(DATA)
Data output valid time
2.7 V ≤ VDD ≤ 3.6 V
-
14
ns
1.71 V ≤ VDD ≤ 3.6 V
-
21
tOH(DATA)
Data output hold time
1.71 V ≤ VDD ≤ 3.6 V
7-
tOV(DE)
DE output valid time
-
12.5
tOH(DE)
DE output hold time
6
-
tSU(RDY)
RDY input setup time
1.71 V ≤ VDD ≤ 3.6 V
0-
tH(RDY)
RDY input hold time
0
-
1. Evaluated by characterization. Not tested in production.
2. This maximal frequency does not consider receiver setup and hold timings.



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