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STM32U535NET3QTR Datasheet(PDF) 136 Page - STMicroelectronics

Part # STM32U535NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Datasheet(HTML) 136 Page - STMicroelectronics

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Electrical characteristics
STM32U535xx
136/278
DS14217 Rev 1
Figure 26. VREFINT versus temperature
5.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Section 5.1.7: Current consumption
measurement.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•
All I/O pins are in analog input mode.
•
All peripherals are disabled except when explicitly mentioned.
•
The flash memory access time is adjusted with the minimum wait-state number,
depending on the fHCLK frequency (refer to the tables “Number of wait states according
to CPU clock (HCLK) frequency” available in the product reference manual).
ACoeff(3)
Long term stability
1000 hours, TJ = 25 °C
-
400
1000
ppm
VDDCoeff(4)
Average voltage coefficient
3.0 V ≤ VDD ≤ 3.6 V
-
500
2900
ppm/V
VREFINT_DIV1(3) 1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2(3) 1/2 reference voltage
-
49
50
51
VREFINT_DIV3(3) 3/4 reference voltage
-
74
75
76
1. VREFINT does not take into account package and soldering effects.
2. The shortest sampling time for the application can be determined by multiple iterations.
3. Specified by design. Not tested in production.
4. Evaluated by characterization. Not tested in production.
Table 35. Embedded internal voltage reference (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MSv69159V1



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