IMXRT1040CEC datasheet(21/106 Pages) NXP

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Table 7. Absolute maximum ratings (continued)

Parameter Description

Symbol

Min

Max

Unit

ESD damage Immunity:

Human Body Model (HBM)

Charge Device Model (CDM)

Vesd

—

1000

500

Input/Output Voltage range

Vin/Vout

-0.5

OVDD + 0.31

Storage Temperature range

TSTORAGE

-40

150

o C

1. OVDD is the I/O supply voltage.

4.1.2 Thermal resistance

4.1.2.1 9 x 9 MM thermal resistance

Table 8 shows the 9 x 9 MM package thermal resistance data.

Table 8. 9 x 9 MM thermal resistance data

Rating

Board type1

Symbol

Value

Unit

Junction to Ambient

Thermal resistance2

JESD51-9, 2s2p

RθJA

33.5

oC/W

Junction-to-Top of Package

Thermal Characterization Package2

JESD51-9, 2s2p

ΨJT

0.9

oC/W

Junction to Case Thermal Resistance3

JESD51-9, 1s

RθJC

14.2

oC/W

1. Thermal test board meets JEDEC specification for this package (JESD51-9).

2. Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is

solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not

meant to predict the performance of a package in an application-specific environment.

3. Junction-to-Case thermal resistance determined using an isothermal topside heat extraction. Case temperature is the

package topside temperature

4.1.3 Operating ranges

Table 9 provides the operating ranges of the i.MX RT1040 processors. For details on the chip's power structure, see the "Power

Management Unit (PMU)" chapter of the

i.MX RT1040 Reference Manual (IMXRT1040RM).

Table 9. Operating ranges

Parameter

Description

Symbol

Operating

Conditions

Min

Typ

Max1 Unit

Comment

Run Mode

VDD_SOC_IN

Overdrive

1.25

—

1.26

—

VDD_SOC_IN

M7 core at 528

MHz

1.15

—

1.26

—

Table continues on the next page...

NXP Semiconductors

Electrical Characteristics

i.MX RT1040 Crossover Processors for Consumer Products, Rev. 2, 01/2023

Data Sheet: Technical Data

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