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JFE150DBVT Datasheet(PDF) 15 Page - Texas Instruments |
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JFE150DBVT Datasheet(HTML) 15 Page - Texas Instruments |
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15 / 29 page ![]() 9.2.1 Design Requirements PARAMETER DESIGN GOAL Gain 60 dB Frequency response 60 Hz to 20 kHz Noise < 1.5 nV/√Hz Input current < 100 pA Output swing ±5 V 9.2.2 Detailed Design Procedure This design provides 60 dB of gain with extremely high input impedance at a very low frequency response. The order of design priorities are as follows: • The JFE150 bias current is set by selecting the desired bias current and noise tradeoff (see Figure 6-11). The input-referred noise is dominated by the JFE150 bias current and gain. To set the bias current point, adjust the source resistance according to Figure 9-3. • After the bias current is selected, set the JFET stage gain as high as possible without pushing the device into the linear region of operation. This is achieved by using the largest drain resistor (RD) possible while maintaining a minimum of 2 V across the drain to source nodes. Be aware that the amplifier forces the drain node to match the noninverting amplifier input in normal closed-loop operation. Both ac and dc voltages must be considered, but generally, only the dc operating point on the drain is considered because the ac voltage swing is minimal. • Set the closed gain according to RF2 and RS2, as seen in Equation 4. Thermal noise from RS2 directly couples into the circuit; therefore, small values for this resistor are required. • CS is required to block dc voltages from altering the bias point set by source resistor RS. CS also forms the low-frequency response as described in Equation 5. 9.2.3 Application Curves Figure 9-7. Voltage Gain Figure 9-8. Input-Referred Noise Density www.ti.com JFE150 SLPS732B – JUNE 2021 – REVISED APRIL 2023 Copyright © 2023 Texas Instruments Incorporated Submit Document Feedback 15 Product Folder Links: JFE150 |
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