S75WS256NDFBAWMA datasheet(97/216 Pages) SPANSION

97 / 216 page

Publication Number S75WS-N-00

Revision A Amendment 0 Issue Date February 17, 2005

DATA SHEET

S29RS512N

512 Megabit (32 M x 16-Bit) CMOS 1.8 Volt-only

Read/Write, Burst Mode, Mass Storage Flash Memory

for Multi-Chip Products (MCP)

Distinctive Characteristics

Architectural Advantages

Single 1.8 volt read, program and erase (1.65

to 1.95 volt)

Manufactured on 0.11 µm MirrorBitTM process

Read/Write operation

— Zero latency between read and write operations

Programable Burst Interface

— 2 Modes of Burst Read Operation

— Linear Burst: 8, 16, and 32 words with or without

wrap-around

— Continuous Sequential Burst

Sector Architecture

— one-hundred-twenty-eight 256 Kword sectors

100,000 erase cycle per sector typical

20-year data retention typical

Performance Charcteristics

Read access times at 80/66/54 MHz

— Burst access times of 9.1/11.2/13.5 ns

— Synchronous latency of 148 ns

— Asynchronous random access times of 143 ns

High Performance

— Typical word programming time of 40 µs

— Typical effective word programming time of 9.4 µs

utilizing a 32-Word Write Buffer at Vcc Level

— Typical effective word programming time of 6 µs

utilizing a 32-Word Write Buffer at ACC Level

— Typical 2 s sector erase time for 256 Kword sectors

Power dissipation (typical values, CL = 30 pF)

@ 80 MHz

— Continuous Burst Mode Read: 35 mA

— Program: 19 mA

—Erase: 19 mA

— Standby mode: 20 µA

Hardware Features

Sector Protection

— Dynamic Protection Bits (DYB) are assigned to every

sector

— A command sector protection to lock/unlock

combinations of individual sectors to prevent/allow

program or erase operations within that sector.

Handshaking feature available

— Provides host system with minimum possible latency

by monitoring RDY

ACC input: Acceleration function reduces

programming time in a factory setting

Low VCC write inhibit

Software Features

Software command set compatible with

JEDEC 42.4 standards

Data# Polling and toggle bits

— Provides a software method of detecting program and

erase operation completion

Erase Suspend/Resume

— Suspends an erase operation to read data from, or

program data to, a sector that is not being erased,

then resumes the erase operation

Program Suspend/Resume

— Suspends a programming operation to read data from

a sector other than the one being programmed, then

resume the programming operation

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

Additional Features

Program Operation

— Ability to perform synchronous and asynchronous

write operation independent of burst control register

setting

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