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DP83849IF Datasheet(PDF) 84 Page - National Semiconductor (TI) |
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DP83849IF Datasheet(HTML) 84 Page - National Semiconductor (TI) |
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84 / 108 page  84 www.national.com 8.0 Electrical Specifications Note: All parameters are guaranteed by test, statistical analysis or design. Absolute Maximum Ratings Recommended Operating Conditions Absolute maximum ratings are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. 8.1 DC Specs Supply Voltage (VCC) -0.5 V to 4.2 V DC Input Voltage (VIN) -0.5V to VCC + 0.5V DC Output Voltage (VOUT) -0.5V to VCC + 0.5V Storage Temperature (TSTG) -65oC to 150°C Lead Temp. (TL) (Soldering, 10 sec.) 260 °C ESD Rating (RZAP = 1.5k, CZAP = 100 pF) 4.0 kV Supply voltage (VCC) 3.3 Volts + 0.3V Industrial - Ambient Temperature (TA) -40 to 85 °C Power Dissipation (PD) 594 mW Thermal Characteristic Max Units Maximum Case Temperature @ 1.0 W 108 °C Theta Junction to Case (Tjc) @ 1.0 W 17.3 °C / W Theta Junction to Ambient (Tja) degrees Celsius/Watt - No Airflow @ 1.0 W 53 °C / W Symbol Pin Types Parameter Conditions Min Typ Max Units VIH I I/O Input High Voltage Nominal VCC 2.0 V VIL I I/O Input Low Voltage 0.8 V IIH I I/O Input High Current VIN = VCC 10 µA IIL I I/O Input Low Current VIN = GND 10 µA VOL O, I/O Output Low Voltage IOL = 4 mA 0.4 V VOH O, I/O Output High Voltage IOH = -4 mA Vcc - 0.5 V IOZ I/O, O TRI-STATE Leakage VOUT = VCC + 10 µA VTPTD_100 PMD Output Pair 100M Transmit Voltage 0.95 1 1.05 V VTPTDsym PMD Output Pair 100M Transmit Voltage Symmetry + 2 % VTPTD_10 PMD Output Pair 10M Transmit Voltage 2.2 2.5 2.8 V VFXTD_100 PMD Output Pair FX100M Transmit Voltage .3 .5 .93 V CIN1 I CMOS Input Capacitance 8 pF COUT1 O CMOS Output Capacitance 8 pF |
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