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BUJ100AT Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUJ100AT Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 9 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT Fig.19. Resistive switching. tf = f(I C) 0 0.5 1 1.5 2 50 100 1,000 2,000 5,000 IC COLLECTOR CURRENT (A) tf (ns) IC/IB = 3 IC/IB = 10 IC/IB = 5 Fig.20. Test Circuit for the RBSOA test. V cl ≤ 700V; Vcc = 150V; LB = 1µH; Lc = 200µH Fig.21. Reverse bias safe operating area T j ≤ Tjmax for -V BE = 9V, 5V,3V & 1V LB IBon -VBB LC T.U.T. VCC PROBE POINT VCL(RBSOAR) 0 100 200 300 400 500 600 700 800 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VCEclamp/V IC/A -9V -5V -3V -1V September 1999 6 Rev 1.000 |
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