©2006 SST Communications Corp.

S71291-02-000

7/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

High Gain:

– Typically 32 dB gain across 2.4–2.5 GHz over

temperature 0°C to +85°C

•

High linear output power:

– >29 dBm P1dB

- Please refer to “Absolute Maximum Stress

Ratings” on page 4

– Meets 802.11g OFDM ACPR requirement up to

25 dBm

– Added EVM~4% up to 23 dBm for

54 Mbps 802.11g signal

– Added EVM~3.5% up to 23 dBm for

application over 2.3–2.4 GHz or

2.5–2.6 GHz WiBro/WiMax frequency bands

– Meets 802.11b ACPR requirement up to 25 dBm

•

High power-added efficiency/Low operating

current for both 802.11g/b applications

•

•

Low idle current

•

High-speed power-up/down

– Turn on/off time (10%-90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

– ~1 dB detector variation over 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

On-chip power detection

•

25 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 16-contact VQFN (3mm x 3mm)

•

All non-Pb (lead-free) devices are RoHS compliant

APPLICATIONS:

•

WLAN (IEEE 802.11g/b)

•Home RF

•

Cordless phones

•

2.4 GHz ISM wireless equipment

PRODUCT DESCRIPTION

The SST12LP15A is a high-power and high-gain power

amplifier based on the highly-reliable InGaP/GaAs HBT

technology.

The SST12LP15A can be easily configured for high-power

applications with superb power-added efficiency while

operating over the 2.4-2.5 GHz frequency band. It typically

provides 32 dB gain with 26% power-added efficiency @

The SST12LP15A has excellent linearity, typically ~4%

added EVM at 23 dBm output power which is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 25 dBm. This device can be configured for

applications with an added EVM of approximately 3.5%, up

to 23 dBm over 2.3–2.4 GHz or 2.5–2.6 GHz WiBro/

WiMax frequency bands. SST12LP15A also has wide-

range (>25 dB), temperature-stable (~1 dB over 85°C), sin-

gle-ended/differential power detectors which lower users’

cost on power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/down control. Ultra-

SST12LP15A controllable by an on/off switching signal

directly from the baseband chip. These features coupled

with low operating current make the SST12LP15A ideal for

the final stage power amplification in battery-powered

802.11g/b WLAN transmitter applications.

The SST12LP15A is offered in 16-contact VQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4 GHz High-Power and High-Gain Power Amplifier

SST12LP15A

SST-GP1215A2.4 GHz High Gain High Power PA