© Nexperia B.V. 2017. All rights reserved

Nexperia

PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 February 2013

5 / 13

003aah108

single shot

0.2

0.1

0.05

10-3

10-2

10-1

1

10-6

10-5

10-4

10-3

10-2

10-1

1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

0.02

tp

T

P

t

tp

T

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C

60

-

-

V

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = -55 °C

54

-

-

V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 9; Fig. 10

1.4

1.7

2.1

V

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 9

-

-

2.45

V

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 9

0.5

-

-

V

VDS = 60 V; VGS = 0 V; Tj = 25 °C

-

0.06

1

µA

IDSS

drain leakage current

VDS = 60 V; VGS = 0 V; Tj = 175 °C

-

-

500

µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

IGSS

gate leakage current

VGS = -16 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 11

-

3.6

4.3

mΩ

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11

-

3.17

3.9

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 175 °C;

Fig. 12; Fig. 11

-

-

8.6

mΩ

RG

gate resistance

f = 1 MHz

0.35

0.7

1.4

Ω