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Nexperia

PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

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Product data sheet

5 February 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Dynamic characteristics

ID = 25 A; VDS = 48 V; VGS = 10 V;

Fig. 13; Fig. 14

-

151

-

nC

QG(tot)

total gate charge

ID = 25 A; VDS = 48 V; VGS = 5 V;

Fig. 13; Fig. 14

-

72

-

nC

QGS

gate-source charge

-

20

-

nC

QGD

gate-drain charge

ID = 25 A; VDS = 48 V; VGS = 10 V;

Fig. 13; Fig. 14

-

27

-

nC

Ciss

input capacitance

-

8533

-

pF

Coss

output capacitance

-

703

-

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

357

-

pF

td(on)

turn-on delay time

-

47

-

ns

tr

rise time

-

97

-

ns

td(off)

turn-off delay time

-

84

-

ns

tf

fall time

VDS = 45 V; RL = 1.8 Ω; VGS = 5 V;

RG(ext) = 5 Ω

-

73

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.8

1.2

V

trr

reverse recovery time

-

40

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

59

-

nC

003aah904

0

60

120

180

0

0.5

1

1.5

2

VDS(V)

ID

(A)

VGS(V) =10

2.6

2.8

3.5

4.5

2.4

3

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah905

0

5

10

15

0

2.5

5

7.5

10

VGS (V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values