AM15540v2

5

6

7

8

1

2

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

Features

Order code

V DS

RDS(on) max

ID

STL160N4F7

40 V

2.5 mΩ

120 A

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.

Product status

STL160N4F7

Product summary

Order code

STL160N4F7

Marking

160N4F7

Package

PowerFLAT 5x6

Packing

Tape and reel

N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a

PowerFLAT 5x6 package

STL160N4F7

Datasheet

DS11024 - Rev 3 - November 2019

For further information contact your local STMicroelectronics sales office.

www.st.com