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STM32G431C6 Datasheet(PDF) 105 Page - STMicroelectronics |
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STM32G431C6 Datasheet(HTML) 105 Page - STMicroelectronics |
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105 / 198 page  DS12589 Rev 6 105/198 STM32G431x6 STM32G431x8 STM32G431xB Electrical characteristics 160 Figure 24. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 44. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs Table 43. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv40989V1 -6 -4 -2 0 2 4 6 -50 -30 -10 10 30 50 70 90 110 130 Avg min max °C % |
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