ECC204

Electrical Characteristics

© 2023 Microchip Technology Inc.

and its subsidiaries

Summary Data Sheet

DS40002436A-page 10

Notes: 

1.

All specifications not shown can be found in the All I/O Interfaces Table 3-1.

2.

The Single-Wire voltage must never be greater than VCC.

3.

This condition is characterized but not production tested.

4.

Operation over the CBUS range is ensured by design and is not production tested.

3.2.3

DC Parameters: Single-Wire Interface – Parasitic Power Mode

Table 3-3. DC Parameters on Parasitic Single-Wire Interface

Unless otherwise indicated, these values are applicable over the specified operating range from TA = -40℃ to +105℃, CMOSen =

'1'

Parameter

Sym.

Min.

Typ.

Max.

Units

Conditions

Max. I/O Voltage(2)

VPUP

2.5

—

5.5

V

—

Output Low Voltage

VOL

—

—

0.4

V

When the device is in Active mode,

VPUP = 2.5V to 3.6V for output-low current = 8.0 mA

Input Low Leakage(4)

IIL

-200

—

200

nA

VIN = GND, VCC_DVC ≥ 1.65V

Input Low Threshold

VIL1

-0.5

—

0.3*VPUP

V

—

Input High Threshold

VIH1

0.7*VPUP

—

VPUP+0.5

V

—

Bus Capacitance

CBUS

—

—

500

pF

—

Notes: 

1.

All specifications not shown can be found in the All I/O Interfaces Table 3-1.

2.

Single-Wire voltage (VPUP) must never be greater than the maximum VPUP operating voltage.

3.

For the lowest system current, the SI/O signal must be driven to VPUP by the host or allowed to be pulled up by

the pull-up resistors.

4.

Input High leakage cannot be measured in parasitic power mode because the device and decoupling capacitor

are charged via the SI/O signal. Low leakage is valid provided device was charged to be within the operational

range.

5.

Operation over the CBUS range is ensured by design and is not production tested.