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TDA8569Q Datasheet(PDF) 7 Page - NXP Semiconductors |
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TDA8569Q Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 20 page ![]() 1997 Mar 27 7 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage operating − 18 V non-operating − 30 V load dump protection; during 50 ms; tr ≥ 2.5 ms − 45 V Vsc(safe) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 7.5 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case (see Fig.6) 1 K/W Fig.6 Equivalent thermal resistance network. handbook, halfpage 3.2 K/W 0.2 K/W 3.2 K/W 3.2 K/W 3.2 K/W virtual junction OUT1 OUT2 OUT3 OUT4 case MGG157 |
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