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TDA8569Q Datasheet(PDF) 9 Page - NXP Semiconductors

Part # TDA8569Q
Description  4 x 25 W BTL quad car radio power amplifier
PDF  20 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8569Q Datasheet(HTML) 9 Page - NXP Semiconductors

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1997 Mar 27
9
Philips Semiconductors
Preliminary specification
4
× 25 W BTL quad car radio power
amplifier
TDA8569Q
AC CHARACTERISTICS
VP = 14.4 V; RL =4 Ω; f = 1 kHz; Tamb =25 °C; measured in Fig.7; unless otherwise specified.
Notes
1. Frequency response externally fixed.
2. Vripple =Vripple(max) = 2 V (p-p); Rs =0 Ω.
3. B = 20 Hz to 20 kHz; Rs =0 Ω.
4. B = 20 Hz to 20 kHz; Rs =10kΩ.
5. B = 20 Hz to 20 kHz; independent of Rs.
6. PO = 16 W; Rs =10kΩ.
7. Vi =Vi(max) = 1 V (RMS).
8. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Po
output power
THD = 0.5%
16
19
−
W
THD = 10%
21
25
−
W
THD = 30%
28
35
−
W
VP = 13.2 V; THD = 0.5%
−
15
−
W
VP = 13.2 V; THD = 10%
−
21
−
W
THD
total harmonic distortion
Po =1W
−
0.05
−
%
V9 ≤ 0.6 V; note 8
−
10
−
%
Bp
power bandwidth
THD = 0.5%; Po = −1dB
with respect to 16 W
−
20 to
20000
−
Hz
fro(l)
low frequency roll-off
at
−1 dB; note 1
−
25
−
Hz
fro(h)
high frequency roll-off
at
−1dB
20
−−
kHz
Gv
closed loop voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection on; note 2
50
−−
dB
mute; note 2
50
−−
dB
standby; note 2
80
−−
dB
Zi
input impedance
25
30
38
k
Ω
Vn(o)
noise output voltage
on; note 3
−
85
120
µV
on; note 4
−
100
−µV
mute; note 5
−
60
−µV
αcs
channel separation
note 6
45
−−
dB
∆Gv
channel unbalance
−−
1dB
Vo
output signal in mute
note 7
−−
2mV
Po
output power
THD = 0.5%; RL =2 Ω−
30
−
W
THD = 10%; RL =2 Ω−
40
−
W
THD = 30%; RL =2 Ω−
55
−
W
THD
total harmonic distortion
Po =1W; RL =2 Ω−
0.1
−
%



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