MCP1256 datasheet(4/24 Pages) MICROCHIP

4 / 24 page

MCP1256/7/8/9

DS21989A-page 4

MCP1256 and MCP1257 Devices

SLEEP Mode Input - SLEEP

SLEEP Input Voltage Low

VIL(SLEEP)

——

0.4

SLEEP Input Voltage High

VIH(SLEEP)

1.4

—

SLEEP Input Leakage

Current

ILK(SLEEP)

—

0.001

0.1

μA

SLEEP Quiescent Current

—10

μAVSLEEP = 0V, IOUT = 0 mA

MCP1256 and MCP1258 Devices

Power-Good Output - PGOOD

PGOOD Threshold

VTH

—

Percent of VOUT Falling

PGOOD Hysteresis

VHYS

—110

—

VOUT Rising

PGOOD Output Low

Voltage

VOL

—

100

ISINK = 0.5 mA, VIN = 1.8V

PGOOD Input Leakage

Current

ILK(PGOOD)

—0.02

μAVPGOOD = VIN

MCP1257 and MCP1259

Low-Battery Output - LBO

LBO Threshold

VTH

—1.95—

VIN Falling

LBO Hysteresis

VHYS

—

240

—

VIN Rising

LBO Output Low Voltage

VOL

—

100

ISINK = 0.5 mA, VIN = 1.8V

LBO Input Leakage Current

ILK(LBO)

—0.02

μAVLBO = VIN

MCP1258 and MCP1259

BYPASS Mode Input - BYPASS

BYPASS Input Voltage Low

VIL(BYPASS)

——

0.4

BYPASS Input Voltage

High

VIH(BYPASS)

1.4

—

BYPASS Input Leakage

Current

ILK(BYPASS)

—

0.001

0.1

μA

BYPASS Quiescent

Current

—0.25

μAVBYPASS = 0V, IOUT = 0 mA,

TJ = +25°C

BYPASS Input-to-Output

Impedance

RBYPASS

—1.5

—

VIN = 2.4V

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = 1.8V to 3.6V, SHDN = VIN, CIN = COUT = 10 μF,

C1 = C2 = 1 μF, IOUT = 10 mA, TJ = -40°C to +125°C. Typical values are at TJ = +25°C.

Parameters

Sym

Min

Typ

Max

Unit

Conditions

MCP1256 Datasheet(PDF) 4 Page - Microchip Technology

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