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UMA1015M/C2 Datasheet(PDF) 7 Page - NXP Semiconductors |
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UMA1015M/C2 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 24 page ![]() 1995 Jun 22 7 Philips Semiconductors Product specification Low-power dual frequency synthesizer for radio communications UMA1015M Power-down modes The device can be powered down either via pin HPD (active LOW = power-down) or via the serial bus (bits SPDA and SPDB, logic 0 = power-down). The synthesizers are powered up when both hardware and software Power-down signals are at logic 1. When only one synthesizer is powered down, the functions common to both will be maintained. When both synthesizers are switched off, only the voltage doubler (if enabled) will remain active drawing a reduced current. An internal oscillator will drive the doubler in this situation. If both synthesizers have been in a power-down condition, then when one or both synthesizers are reactivated, the reference and main dividers restart in such a way as to avoid large random phase errors at the phase comparator. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. SYMBOL PARAMETER MIN. MAX. UNIT VDD1, VDD2 DC range of digital power supply voltage with respect to DGND −0.3 +6.0 V VCC DC charge pump supply voltage with respect to AGND −0.3 +6.0 V ∆V CC-DD difference in voltage between VCC and VDD1, VDD2 −0.3 +6.0 V Vn DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with respect to DGND −0.3 VDD1 + 0.3 V V3, 17 DC voltage at pins 3 and 17 with respect to AGND −0.3 VCC + 0.3 V ∆V GND difference in voltage between AGND and DGND (these pins should be connected together) −0.3 +0.3 V Tstg storage temperature −55 +125 °C Tamb operating ambient temperature −30 +85 °C |
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