TLV431ACDBVT datasheet(4/54 Pages) TI

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5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VKA

Cathode voltage

(2)

Continuous cathode current

–20

Iref

Reference current

–0.05

Operating virtual junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Voltage values are with respect to the anode terminal, unless otherwise noted.

5.2 ESD Ratings

PARAMETER

DEFINITION

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins

(1)

±2000

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins

(2)

±1000

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VKA

Cathode voltage

VREF

Cathode current

0.1

Operating free-air temperature

TLV431_C

°C

TLV431_I

–40

TLV431_Q

–40

125

5.4 Thermal Information

THERMAL METRIC

(1)

TLV431x

UNIT

DCK

DBV

DBZ

6 PINS

8 PINS

3 PINS

5 PINS

3 PINS

RθJA

Junction-to-ambient thermal

resistance

206

140

°C/W

RθJC(top)

Junction-to-case (top) thermal

resistance

259

131

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

TLV431, TLV431A, TLV431B

SLVS139Z – JULY 1996 – REVISED JUNE 2024

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