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TPCF8104 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPCF8104
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8104 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPCF8104
2006-11-16
4
Drain current ID (A)
RDS (ON) – ID
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID – VDS
Gate-source voltage VGS
(V)
ID – VGS
Gate-source voltage VGS
(V)
VDS – VGS
Drain current ID (A)
⎪Yfs⎪ – ID
0
8
-10
-5
Common source
VDS = -10 V
Pulse test
0
-1
-2
-3
-4
Ta
= −55°C
25
100
-6
-8
4
Common source
Ta
= 25℃
Pulse test
0
-0.3
-0.4
-0.5
0
ID = -6 A
-2
-4
-6
-8
-10
-1.5
-3
-0.2
-0.1
Common source
VDS = -10 V
Pulse test
-0.1
-10
-100
-0.1
-1
-100
25
100
Ta
= −55°C
-1
-10
common source
Ta
= 25°C
Pulse test
1
-0.1
-1
-10
-100
10
1000
VGS = -10 V
100
-4.5
ID – VDS
-5
-3
-2
0
-4
-1
Common source
Ta
= 25°C
Pulse test
0
-0.2
-0.4
-0.6
-0.8
VGS = -2.1V
-2.2
-2.4
-2.3
-2.6
-2.5
-4.5
-10
-1.0
-2.8
-2.7
-3.5
-3
Common source
Ta
= 25°C
Pulse test
-8
-6
-4
-2
0
-10
0
-2
-5
-2.2
-2.3
-2.4
-2.7
-10
-2.5
-2.6
-4
-3
-1
-2.8
VGS = -2.1 V
-4.5
-3
-3.5



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