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TPCF8104 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TPCF8104
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8104 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCF8104
2006-11-16
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
50.0
°C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
178.6
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ● on the lower leftof the marking indicates Pin 1.
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Part No.
(or abbreviation code)
F3D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code



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