TPCF8104 datasheet(3/7 Pages) TOSHIBA

3 / 7 page

TPCF8104

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1mA

−0.8

⎯

−2.0

VGS = −4.5 V, ID = −3.0 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −3.0A

⎯

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −3.0A

4.8

9.6

⎯

Input capacitance

Ciss

⎯

1760

⎯

Reverse transfer capacitance

Crss

⎯

200

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

210

⎯

Rise time

⎯

2.8

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge1

Qgs1

⎯

4.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −24 V, VGS = −10V,

ID = −6.0 A

⎯

7.2

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

⎯

−24

Forward voltage (diode)

VDSF

IDR = −6.0 A, VGS = 0 V

⎯

1.2

VDD ∼− −15 V

−10 V

VGS

0 V

ID = −3.0 A

VOUT

TPCF8104 Datasheet(PDF) 3 Page - Toshiba Semiconductor

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